Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference34 articles.
1. Low chirp observed in directly modulated quantum dot lasers
2. High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping
3. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
4. Crystallographic texture and interface structure in Co/Cu multilayer films
5. Critical layer thickness for self-assembled InAs islands on GaAs
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1. MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al2O3 passivation;Vacuum;2024-06
2. Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration;Journal of Luminescence;2023-06
3. Preparation of AgInS2 quantum dots and their application for Pb2+ detection based on fluorescence quenching effect;Vacuum;2021-11
4. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20
5. Impact of localization phenomenon and temperature on the photoluminescence spectra of GaSbBi alloys and GaSbBi/GaAs quantum dots;Superlattices and Microstructures;2019-05
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