Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures-Reference-Cited by-同舟云学术

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Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures

Published:2009-10 Issue:4 Volume:46 Page:611-617
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sengupta S.,Halder N.,Chakrabarti S.,Herrera Miriam,Bonds Marta,Browning Nigel D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Low chirp observed in directly modulated quantum dot lasers

2. Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier

3. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

4. Crystallographic texture and interface structure in Co/Cu multilayer films

5. Critical layer thickness for self-assembled InAs islands on GaAs

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1. The intensity and direction of the electric field effects on off-center shallow-donor impurity binding energy in wedge-shaped cylindrical quantum dots;Thin Solid Films;2022-09

2. Optical studies of InAs/GaAs quantum dot stacks for photovoltaic applications;Experimental and Theoretical NANOTECHNOLOGY;2021-05-15

3. Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures;Nanoscale Advances;2021

4. Optimization of vertical strain coupling in InAs/GaAs p-i-p quantum dot infrared photodetectors with applied growth strategy;Journal of Luminescence;2020-10

5. GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2020-10

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