Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures-Reference-Cited by-同舟云学术

Near-IR emission of InGaN quasi-quantum dots on non-polar GaN nanowire structures

Published:2021 Issue:17 Volume:3 Page:5036-5045
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Um Dae-Young¹,Ra Yong-Ho²,Park Ji-Hyeon²,Hong Ga-Eun¹,Lee Cheul-Ro¹^ORCID

Affiliation:

1. Semiconductor Materials & Process Laboratory (SMPL), School of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, Republic of Korea

2. Optic & Electronic Component Material Center, Korea Institute of Ceramic Engineering & Technology, Jinju 52851, Republic of Korea

Abstract

In group III-nitride based semiconductor structures, the incorporation of high-indium-composition InGaN has been severely limited by extremely inefficient strain-induced polarization fields and prohibitively large defect densities.

Funder

National Research Foundation of Korea

Ministry of Science and ICT, South Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NA/D1NA00338K

Reference38 articles.

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