Coaxial InxGa1–xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes-Reference-Cited by-同舟云学术

Coaxial InxGa1–xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes

Published:2013-05-28 Issue:8 Volume:13 Page:3506-3516
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ra Yong-Ho¹,Navamathavan R.¹,Park Ji-Hyeon¹,Lee Cheul-Ro¹

Affiliation:

1. Semiconductor Materials Process Laboratory, School of Advanced Materials Engineering, Engineering College, Research Center for Advanced Materials Development (RCAMD), Chonbuk National University, Deokjin-dong 664-14, Chonju 561-756, Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl400906r

Reference43 articles.

1. Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes

2. Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics

3. Individual GaN Nanowires Exhibit Strong Piezoelectricity in 3D

4. UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering

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