Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices
4. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
5. Structural characterization of Si1−xGex alloy layers grown by molecular beam epitaxy on Si(001) substrates
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1. Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells;Solar Energy Materials and Solar Cells;2016-01
2. Different architectures of relaxed Si1−xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics;Journal of Crystal Growth;2011-08
3. Growth and spectroscopic properties of RE, Mn:YAP (RE=Yb and Ce) photorefractive crystals;Journal of Luminescence;2009-10
4. Fabrication of Thick Germanium-on-Insulator (GeOI) Substrates;Journal of Electronic Materials;2008-04-04
5. Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers;MRS Proceedings;2007
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