Different architectures of relaxed Si1−xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics-Reference-Cited by-同舟云学术

Different architectures of relaxed Si1−xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics

Published:2011-08 Issue:1 Volume:328 Page:18-24
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Raïssi M.,Regula G.,Hadj Belgacem C.,Rochdi N.,Bozzo-Escoubas S.,Coudreau C.,Holländer B.,Fnaiech M.,D'Avitaya F.A.,Lazzari J.-L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

2. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

3. High-mobility Si and Ge structures

4. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

5. Anomalous strain relaxation in SiGe thin films and superlattices

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