Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy

Published:2004-01 Issue:3-4 Volume:260 Page:360-365
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tanaka Shigeyasu,Honda Yoshio,Kameshiro Norifumi,Iwasaki Ryuta,Sawaki Nobuhiko,Tanji Takayoshi,Ichihashi Mikio

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

2. Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

3. Influence of Thermal Annealing on GaN Buffer Layers and the Property of Subsequent GaN Layers Grown by Metalorganic Chemical Vapor Deposition

4. Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire

5. Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate

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1. Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering;Technical Physics Letters;2020-04

2. Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy;Journal of Electron Microscopy;2007-10-19

3. Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure;Journal of Electron Microscopy;2007-04-01

4. Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate;physica status solidi (c);2006-06

5. Defect structure in GaN pyramids;Journal of Materials Science;2006-02