Optical spectra of (1-101) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degree off axis (001) Si substrate
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference11 articles.
1. Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
2. Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors
3. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
4. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy
5. Selective Area Growth of GaN on Stripe-Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells;Journal of Materials Chemistry C;2020
2. Selective growth and impurity incorporation in semipolar GaN grown on Si substrate;SPIE Proceedings;2010-02-11
3. Time-resolved spectroscopy in an undoped GaN (1-101);physica status solidi (c);2008-01
4. Mg doping in (11¯01)GaN grown on a 7° off-axis (001)Si substrate by selective MOVPE;Journal of Crystal Growth;2007-01
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