Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions-Reference-Cited by-同舟云学术

Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions

Published:2020-01 Issue: Volume:529 Page:125297
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Galazka Zbigniew^ORCID,Irmscher Klaus,Schewski Robert^ORCID,Hanke Isabelle M.,Pietsch Mike,Ganschow Steffen,Klimm Detlef^ORCID,Dittmar Andrea,Fiedler Andreas,Schroeder Thomas,Bickermann Matthias^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference69 articles.

1. β-Ga2O3 for wide-bandgap electronics and optoelectronics

2. On the bulk β-Ga2O3 single crystals grown by the Czochralski method

3. Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

4. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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