Facet evolution of selectively grown epitaxial Si1−Ge fin layers in sub-100 nm trench arrays-Reference-Cited by-同舟云学术

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Facet evolution of selectively grown epitaxial Si1−Ge fin layers in sub-100 nm trench arrays

Published:2020-02 Issue: Volume:532 Page:125429
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jang Hyunchul^ORCID,Koo Sangmo,Byeon Dae-Seop,Choi Yongjoon,Ko Dae-Hong^ORCID

Funder

Ministry of Trade, Industry & Energy

Korea Semiconductor Research Consortium

Wonik IPS Co., Ltd. – Yonsei University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. High-mobility modulation-doped SiGe-channel p-MOSFETs

2. SiGe-channel heterojunction p-MOSFET's

3. Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

4. Ultrathin body sige-on-insulator pmosfets with high-mobility sige surface channels

5. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt;e-Journal of Surface Science and Nanotechnology;2024-04-04

2. Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth;Japanese Journal of Applied Physics;2024-01-17

3. Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations;Solid-State Electronics;2022-05

4. Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations;2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS);2021-09-01

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