Growth and characterization of In Ga1−N (0 < x < 0.16) templates for controlled emissions from MQW-Reference-Cited by-同舟云学术

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Growth and characterization of In Ga1−N (0 < x < 0.16) templates for controlled emissions from MQW

Published:2019-08 Issue: Volume:520 Page:18-26
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Abdelhamid Mostafa,Reynolds J.G.,El-Masry N.A.,Bedair S.M.

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference39 articles.

1. InGaN light-emitting diodes on c -face sapphire substrates in green gap spectral range;Saito;Appl. Phys. Express,2013

2. Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures;Barletta;Appl. Phys. Lett.,2007

3. Critical layer thickness determination of GaN/InGaN/GaN double heterostructures;Reed;Appl. Phys. Lett.,2000

4. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes;Schubert;Appl. Phys. Lett.,2007

5. Auger recombination in InGaN measured by photoluminescence;Shen;Appl. Phys. Lett.,2007

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1. GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition;Applied Physics Letters;2024-08-19

2. Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V-Pit Sidewalls;ACS Applied Optical Materials;2024-01-02

3. Plasma-Assisted Halide Vapor Phase Epitaxy for Low Temperature Growth of III-Nitrides;Crystals;2023-02-22

4. Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates;Advanced Photonics Research;2023-01-20

5. Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD;Applied Physics Letters;2022-08-01

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