Critical layer thickness determination of GaN/InGaN/GaN double heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1334361
Reference10 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Determination of the critical layer thickness in the InGaN/GaN heterostructures
4. Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy
5. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
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