Determination of the critical layer thickness in the InGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125146
Reference11 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy
4. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
5. Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
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