Impact of piezoelectric polarization on the performance of InGaN/GaN p–i–n solar cells with Ga- and N-face polarity
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,Fluid Flow and Transfer Processes
Link
https://link.springer.com/content/pdf/10.1140/epjp/s13360-022-03528-3.pdf
Reference29 articles.
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2. F.K. Yam, Z. Hassan, InGaN: an overview of the growth kinetics, physical properties and emission mechanisms. Superlattices Microstruct 43, 1–23 (2008). https://doi.org/10.1016/j.spmi.2007.05.001
3. A. Wang, S.M. Horcajo, M.J. Tadjer, F. Calle, Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs. Semicond Sci Technol (2015). https://doi.org/10.1088/0268-1242/30/1/015010
4. Q. Deng, X. Wang, H. Xiao, C. Wang, H. Yin, H. Chen, Q. Hou, D. Lin, J. Li, Z. Wang, X. Hou, An investigation on InxGa1−xN/GaN multiple quantum well solar cells. J. Phys. D: Appl. Phys. 44, 265103 (2011). https://doi.org/10.1088/0022-3727/44/26/265103
5. Z.Q. Li, M. Lestradet, Y.G. Xiao, S. Li, Effects of polarization charge on the photovoltaic properties of InGaN solar cells. Phys. Status Solidi A 208, 929–931 (2011). https://doi.org/10.1002/pssa.201026489
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