An investigation on InxGa1−xN/GaN multiple quantum well solar cells-Reference-Cited by-同舟云学术

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An investigation on InxGa1−xN/GaN multiple quantum well solar cells

Published:2011-06-13 Issue:26 Volume:44 Page:265103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Deng Qingwen,Wang Xiaoliang,Xiao Hongling,Wang Cuimei,Yin Haibo,Chen Hong,Hou Qifeng,Lin Defeng,Li Jinmin,Wang Zhanguo,Hou Xun

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Small band gap bowing in In1−xGaxN alloys

2. Fabrication and characterization of InGaN p-i-n homojunction solar cell

3. Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell

4. Theoretical study on InxGa1−xN/GaN quantum dots solar cell

5. Design and Realization of Wide-Band-Gap ($\sim$2.67 eV) InGaN p-n Junction Solar Cell

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium content, doping and thickness related impacts on nonpolar (In,Ga)N solar cell performance: Numerical investigation;Solid State Communications;2023-11

2. Artificial Neural Network Modeling for Optimization with High-Efficiency In_0.2Ga_0.8N/GaN MQW Solar Cell at High Temperature;2023 IEEE International Conference on Artificial Intelligence & Green Energy (ICAIGE);2023-10-12

3. N-Face Semi-Bulk Absorber Boosts Conversion Efficiency of InGaN Solar Cell;Journal of Electronic Materials;2023-09-02

4. Impact of piezoelectric polarization on the performance of InGaN/GaN p–i–n solar cells with Ga- and N-face polarity;The European Physical Journal Plus;2022-12-01

5. High conversion and quantum efficiency indium-rich p-InGaN/p-InGaN/n-InGaN solar cell;Physica B: Condensed Matter;2021-12

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