The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases-Reference-Cited by-同舟云学术

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The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases

Published:2013-12 Issue: Volume:384 Page:61-65
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Xue,Jahn Uwe,Ledig Johannes,Wehmann Hergo-H.,Mandl Martin,Straßburg Martin,Waag Andreas

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. GaN based nanorods for solid state lighting

2. Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE

3. Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

4. Growth and applications of HVPE-GaN nanorods

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications;Progress in Quantum Electronics;2018-09

2. The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods;Nanoscale;2018

3. Exceptionally long GaN sub-micrometer rods grown by HVPE on a MOCVD-GaN rod template;Journal of Alloys and Compounds;2016-12

4. Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods;Wide Band Gap Semiconductor Nanowires 1;2014-08-08

5. Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy;Journal of Applied Physics;2014-04-28

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