Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods
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John Wiley & Sons, Inc.
Reference93 articles.
1. Gold catalyst initiated growth of GaN nanowires by MOCVD;AHL;Physica Status Solidi C,2011
2. Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1 - xAlxN (0 < x ≤ 0.4) films grown on sapphire substrate by MOVPE;AKASAKI;Journal of Crystal Growth,1989
3. GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy;AKASAKA;Applied Physics Letters,1997
4. On the polarity of GaN micro- and nanowires epitaxially grown on sapphire 0001 and Si 111 substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy;ALLOING;Applied Physics Letters,2011
5. Fabrication and growth of GaN-based micro and nanostructures;ALLOING;International Journal of Nanotechnology,2012
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