Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks-Reference-Cited by-同舟云学术

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Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

Published:2011-06 Issue:1 Volume:325 Page:89-92
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bengoechea-Encabo A.,Barbagini F.,Fernandez-Garrido S.,Grandal J.,Ristic J.,Sanchez-Garcia M.A.,Calleja E.,Jahn U.,Luna E.,Trampert A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy

2. The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

3. Growth, morphology, and structural properties of group-III-nitride nanocolumns and nanodisks

4. Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy

5. Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

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