The v/G criterion for defect-free silicon single crystal growth from a melt revisited: Implications for large diameter crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. The mechanism of swirl defects formation in silicon
2. Vacancy and self-interstitial concentration incorporated into growing silicon crystals
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4. Erratum: “Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited” [J. Appl. Phys. 110, 063519 (2011)]
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