Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5μm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Large ground-to-first-excited-state transition energy separation for InAs quantum dots emitting at 1.3 μm
2. Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
3. Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition
4. Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission
5. Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1–1.3 μm semiconductor lasers
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing;Applied Physics A;2010-09-02
2. Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage;Opto-Electronics Review;2010-01-01
3. Strain-induced variations of electronic energy band edges of embedded semiconductor quantum dots in half-space substrates;Journal of Applied Physics;2009-10
4. Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots;Semiconductor Science and Technology;2008-02-18
5. Growth of InAs Quantum Dots with a Strain-Reducing Layer for 1.45 m Emission by Migration-Enhanced Epitaxy;Journal of the Korean Physical Society;2007-10-15
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