A computational study of gas-phase and surface reactions in deposition and etching of GaAs and AlAs in the presence of HCl

Author:

Cavallotti Carlo,Lengyel Istvan,Nemirovskaya Maria,Jensen Klavs F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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5. Atomic layer deposition—Sequential self-limiting surface reactions for advanced catalyst “bottom-up” synthesis;Surface Science Reports;2016-06

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