A computational study of gas-phase and surface reactions in deposition and etching of GaAs and AlAs in the presence of HCl
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference53 articles.
1. Chemical Vapor Deposition, Principles and Applications;Hitchman,1993
2. Organometallic Vapor-Phase Epitaxy;Stringfellow,1989
3. Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy
4. Selective area growth of GaAs and AlGaAs with TMGa, TMAl, AsH3 and HCl by atmospheric pressure MOVPE
5. Novel selective area growth of AlGaAs and AlAs with HCl gas by MOVPE
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