Novel selective area growth of AlGaAs and AlAs with HCl gas by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Growth of GaAs and AlAs thin films by a new atomic layer epitaxy technique
2. GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy
3. Selectively regrown contacts to field-effect transistors with two-dimensional electron-gas channels
4. Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE
5. A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits
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3. HCl-assisted growth of GaN and AlN;Journal of Crystal Growth;2013-05
4. Pattern size effect on source supply process for sub-micrometer scale selective area growth by organometallic vapor phase epitaxy;Journal of Crystal Growth;2006-03
5. A computational study of gas-phase and surface reactions in deposition and etching of GaAs and AlAs in the presence of HCl;Journal of Crystal Growth;2004-07
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