A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering
2. Unified planar process for fabricating heterojunction bipolar transistors and buried‐heterostructure lasers utilizing impurity‐induced disordering
3. CW Operation and Extremely Low Capacitance of TJ-BH MQW Laser Diodes Fabricated by Entire MOVPE
4. Novel buried heterostructure laser triode for monolithic integration
5. Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE
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1. Monolithic coupling of QCLs in evenescent waveguides on InP;Quantum Sensing and Nanophotonic Devices XII;2015-02-08
2. Etching effect of tertiary-butyl chloride during InP-nanowire growth;Journal of Crystal Growth;2014-09
3. Influence of in situ HCl gas cleaning on n/p-type GaAs and AlGaAs regrown interfaces in MOCVD;Journal of Crystal Growth;2005-01
4. Photonic integration using asymmetric twin-waveguide (ATG) technology: part I-concepts and theory;IEEE Journal of Selected Topics in Quantum Electronics;2005-01
5. Selective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF 2 grating caps;SPIE Proceedings;2001-10-29
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