AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering-Reference-Cited by-同舟云学术

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AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering

Published:1987-02-20 Issue:Part 2, No. 2 Volume:26 Page:L134-L135
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Furuya Akira,Makiuchi Masao,Wada Osamu,Fujii Toshio,Nobuhara Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design optimization of tensile-strained SiGeSn/GeSn quantum wells at room temperature;Journal of Applied Physics;2021-03-28

2. Lateral carrier injection for the uniform pumping of several quantum wells in InGaN/GaN light-emitting diodes;Optics Express;2021-01-19

3. Semiconductor lasers for planar integrated optoelectronics;Solid-State Electronics;2000-01

4. LATERAL INJECTION LASERS;International Journal of High Speed Electronics and Systems;1998-12

5. Experimental study of LCI lasers fabricated by single MOCVD overgrowth followed by selective dopant diffusion;IEEE Photonics Technology Letters;1998-11

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