Selective area growth of GaAs and AlGaAs with TMGa, TMAl, AsH3 and HCl by atmospheric pressure MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Selective MOCVD Growth for Application to GaAs/AlGaAs Buried Heterostructure Lasers
2. Selective epitaxy of GaAs/AlGaAs on (111) B substrates by MOCVD and applications to nanometer structures
3. Application of selective epitaxy to fabrication of nanometer scale wire and dot structures
4. Facet modulation selective epitaxy−a technique for quantum‐well wire doublet fabrication
5. Insituburied GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
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1. Selective area epitaxy by metalorganic chemical vapor deposition– a tool for photonic and novel nanostructure integration;Progress in Quantum Electronics;2021-01
2. Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth;Applied Physics Letters;2008-01-14
3. Selective epitaxial growth of GaAs on Ge by MOCVD;Journal of Crystal Growth;2006-12
4. A computational study of gas-phase and surface reactions in deposition and etching of GaAs and AlAs in the presence of HCl;Journal of Crystal Growth;2004-07
5. Selective Area Epitaxy on Structures and Surfaces;Encyclopedia of Materials: Science and Technology;2001
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