Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2830988
Reference9 articles.
1. Selective epitaxial growth of GaAs by low-pressure MOVPE
2. The use of chloride based precursors in metalorganic vapor phase epitaxy
3. Selective area growth of GaAs and AlGaAs with TMGa, TMAl, AsH3 and HCl by atmospheric pressure MOVPE
4. Facet growth of AlxGa1-xAs with HCl gas by metalorganic vapor phase epitaxy
5. Epitaxial growth of a nanoscale, vertically faceted, one-dimensional, high-aspect ratio grating in III-V materials for integrated photonics
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