Selective Area Epitaxy on Structures and Surfaces-Reference-Cited by-同舟云学术

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Selective Area Epitaxy on Structures and Surfaces

Published:2001 Issue: Volume: Page:8295-8299
ISSN:
Container-title:Encyclopedia of Materials: Science and Technology
language:
Short-container-title:

Author:

Yi S.S.,Kuech T.F.

Publisher

Elsevier

Reference19 articles.

1. Selective growth of GaAs and GaAlAs by Cl-assisted OMVPE at atmospheric pressure;Azoulay;J. Electron. Mater.,1992

2. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Behet;Microelectron. J,1996

3. Current status of selective area epitaxy by OMCVD;Bhat;J. Cryst. Growth,1992

4. Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates;Eberl,1995

5. Growth pressure-dependence of selective area metalorganic vapor phase epitaxy on planar patterned substrates;Fujii;J. Cryst. Growth,1995

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective area epitaxy by metalorganic chemical vapor deposition– a tool for photonic and novel nanostructure integration;Progress in Quantum Electronics;2021-01

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