Ga2O3 polymorphs: tailoring the epitaxial growth conditions-Reference-Cited by-同舟云学术

Ga2O3 polymorphs: tailoring the epitaxial growth conditions

Published:2020 Issue:32 Volume:8 Page:10975-10992
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Bosi M.¹²³^ORCID,Mazzolini P.⁴⁵⁶²³^ORCID,Seravalli L.¹²³^ORCID,Fornari R.¹²³⁴⁵^ORCID

Affiliation:

1. IMEM-CNR

2. 43124 Parma

3. Italy

4. Department of Mathematical

5. Physical and Computer Sciences

6. University of Parma

Abstract

We review the nucleation and growth of different Ga₂O₃ polymorphs with several techniques, giving practical guidelines for their synthesis.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02743J

Reference106 articles.

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4. Heteroepitaxy of Ga2(1-x)In2xO3layers by MOVPE with two different oxygen sources

5. Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

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