Formation of aluminum nitride thin films as gate dielectrics on Si (100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Influence of growth conditions on electrical characteristics of AlN on SiC
2. Aluminium nitride films deposition by reactive triode sputtering for surface acoustic wave device applications
3. Increment of the Dielectric Constant of Ta[sub 2]O[sub 5] Thin Films by Retarding Interface Oxide Growth on Si Substrates
4. Preparation of [002] oriented AlN thin films by mid frequency reactive sputtering technique
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