Affiliation:
1. Division of Engineering and Applied Science, California Institute of Technology , Pasadena, California 91125
Abstract
We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF6 plasma and trimethylaluminum [Al(CH3)3]. ALE was observed at temperatures greater than 200 °C, with a maximum etch rate of 1.9 Å/cycle observed at 300 °C as measured using ex situ ellipsometry. After ALE, the etched surface was found to contain a lower concentration of oxygen compared to the original surface and exhibited a ∼35% decrease in surface roughness. These findings have relevance for applications of AlN in nonlinear photonics and wide bandgap semiconductor devices.
Funder
Kavli Nanoscience Institute, California Institute of Technology
Air Force Office of Scientific Research
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献