Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Reduction of doping and trap concentrations in 4H–SiC epitaxial layers grown by chemical vapor deposition
2. High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing
3. Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition
4. Modeling of Silicon Carbide Epitaxial Growth in Hot-Wall Chemical Vapor Deposition Processes
5. Numerical study of SiC CVD in a vertical cold-wall reactor
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1. Gibbs–Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC;Japanese Journal of Applied Physics;2019-04-10
2. Review of SiC crystal growth technology;Semiconductor Science and Technology;2018-09-05
3. Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC;Materials Science Forum;2015-06
4. Epitaxial Growth of Silicon Carbide;Fundamentals of Silicon Carbide Technology;2014-09-26
5. Seed Polarity Dependence of SiC SingleCrystal Growth by Using a Physical Vapor Transport Method;Journal of the Korean Physical Society;2009-05-15
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