Affiliation:
1. STR Group – Soft-Impact Ltd.,
2. DENSO CORPORATION
Abstract
Quasi-thermodynamic model of SiC doping with Al in CVD from C3H8, SiH4, and Al (CH3)3 on the Si-face is developed. The model is validated by quantitative agreement of calculated and experimental data on the Al concentration in SiC as a function of temperature, pressure, SiC growth rate, and TMAl flow rate. The model is shown to be consistent with the site competition mechanism of Al incorporation into SiC.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
3 articles.
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