Estimation of surface-diffusion length of aluminum-containing species on 4H-SiC (0001)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/aba3f8/pdf
Reference32 articles.
1. Fundamentals of Silicon Carbide Technology
2. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
3. Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers
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2. Evaluation of critical supersaturation ratios during epitaxial growth of hexagonal SiC {0001} under carbon- and hydrogen-rich conditions;Japanese Journal of Applied Physics;2023-12-01
3. Models for Impurity Incorporation during Vapor-Phase Epitaxy;Materials Science Forum;2022-05-31
4. Analysis of surface diffusion of carbon- and nitrogen-containing molecules during homoepitaxial growth of 4H-SiC (0001) under silicon-rich conditions;Japanese Journal of Applied Physics;2020-12-15
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