Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Crystalline Oxides on Silicon: The First Five Monolayers
2. Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric
3. Field effect transistors with SrTiO3 gate dielectric on Si
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