Field effect transistors with SrTiO3 gate dielectric on Si-Reference-Cited by-同舟云学术

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Field effect transistors with SrTiO3 gate dielectric on Si

Published:2000-03-06 Issue:10 Volume:76 Page:1324-1326
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Eisenbeiser K.,Finder J. M.,Yu Z.,Ramdani J.,Curless J. A.,Hallmark J. A.,Droopad R.,Ooms W. J.,Salem L.,Bradshaw S.,Overgaard C. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.126023

Reference22 articles.

1. Ultrathin oxide-nitride gate dielectric MOSFET's

2. MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies

3. Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric

4. Preparation of titanium-oxide films by solid-state reactions of titanium/silicon-oxide/silicon structures

5. Growth of crystalline zirconium dioxide films on silicon

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1. High-throughput methodology for the realization of high-entropy sub-nm equivalent-oxide-thickness high-dielectric-constant Ba(Ti,Zr,Ta,Hf,Mo)O3 film-based metal-oxide-semiconductor-related devices;Materials Today Physics;2023-09

2. Synthesis of SrTiO3 by the Calcination of SrCO3 and TiO2 Mixtures Intensively Ground by Means of High Energy Milling;Archives of Metallurgy and Materials;2023-07-26

3. Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices;ACS Nano;2023-05-12

4. High-κ SrTiO3 thin film as gate dielectric of a solution processed SnO2 thin film transistor;Materials Science in Semiconductor Processing;2023-03

5. Off-centering of the Fe atom at the A site in SrTiO₃: calculations and experiment;Ferroelectrics;2023-02-17

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