Electrical characteristics of an ultrathin (1.6 nm) TaOxNy gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126729
Reference6 articles.
1. Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectrics
2. MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies
3. Nitrogen plasma annealing for low temperature Ta2O5 films
4. Ta2O5 thin films with exceptionally high dielectric constant
5. Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
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1. Determining the Nitrogen Content in (Oxy)Nitride Materials;Materials;2018-08-01
2. On the structural, morphological and electrical properties of tantalum oxy nitride thin films by varying oxygen percentage in reactive gases plasma;Chinese Journal of Physics;2017-08
3. Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics;Applied Surface Science;2015-01
4. Structural and ellipsometric study on tailored optical properties of tantalum oxynitride films deposited by reactive sputtering;Journal of Physics D: Applied Physics;2014-11-05
5. Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer;IEEE Transactions on Electron Devices;2014-11
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