Fast epitaxy by PVT of SiC in hydrogen atmosphere
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Growth of 6H and 4H–SiC by sublimation epitaxy
2. Structural improvement in sublimation epitaxy of 4H–SiC
3. Thermodynamic Considerations of the Role of Hydrogen in Sublimation Growth of Silicon Carbide
4. Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}
5. Studies of growth processes in silicon carbide epitaxial layers from the vapour phase
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