Studies of growth processes in silicon carbide epitaxial layers from the vapour phase
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Hydrogen Etching of Silicon Carbide
2. Chemical Etching of Silicon Carbide with Hydrogen
3. Etching Characteristics of Silicon Carbide in Hydrogen
4. Thermodynamic Properties of Individual Substances,1962
5. THE FREE ENERGY OF SILICON CARBIDE FROM ITS SOLUBILITY IN MOLTEN SILVER
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1. Proposal of quasi thermal equilibrium model for etching phenomenon by gases: Example of the etching of 4H-SiC by H2;Japanese Journal of Applied Physics;2014-03-06
2. Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth;Journal of Crystal Growth;2007-02
3. Fast epitaxy by PVT of SiC in hydrogen atmosphere;Journal of Crystal Growth;2005-02
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5. Optically Transparent 6H-Silicon Carbide;Materials Science Forum;1998-02
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