Hydrogen Etching of Silicon Carbide-Reference-Cited by-同舟云学术

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Hydrogen Etching of Silicon Carbide

Published:1969-04 Issue:4 Volume:8 Page:421-428
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kumagawa Masashi,Kuwabara Hiroshi,Yamada Shoji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions;Solid State Phenomena;2024-08-22

2. Influence of electrolytic plasma spatial distribution on nanoporous structure etching on 4H-SiC surface;Ceramics International;2024-07

3. Plasma assisted remediation of SiC surfaces;Journal of Applied Physics;2024-04-15

4. Fabrication of Homogeneous Nanoporous Structure on 4H‐/6H‐SiC Wafer Surface via Efficient and Eco‐Friendly Electrolytic Plasma‐Assisted Chemical Etching;Small;2023-01-12

5. Hydrogen etching of 4H–SiC(0001) facet and step formation;Materials Science in Semiconductor Processing;2022-10

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