Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals-Reference-Cited by-同舟云学术

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Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

Published:2014-07-14 Issue:3 Volume:117 Page:1563-1569
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Wang Bo,Peng Tonghua,Liang Jingkui,Wang Gang,Wang Wenjun,Zhao Huaizhou,Chen Xiaolong

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-014-8594-x.pdf

Reference31 articles.

1. P.G. Neudeck, D.J. Larkin, J.E. Starr, J.A. Powell, C.S. Salupo, L.G. Matus, IEEE Trans. Electron. Devices 41, 826 (1994)

2. P.G. Neudeck, C. Fazi, J. Appl. Phys. 80, 1219 (1996)

3. J.A. Cooper, A. Agarwal, Proc. IEEE 90, 956 (2002)

4. P.G. Neudeck, R.S. Okojie, L.Y. Chen, Proc. IEEE 90, 1065 (2002)

5. M.C. Benjamin, C. Wang, R.F. Davis, R.J. Nemanich, Appl. Phys. Lett. 64, 3288 (1994)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC;RSC Advances;2024

2. Correlation between Stacking Faults in Epitaxial Layers of 4H-SiC and Defects in 4H-SiC Substrate;Journal of Inorganic Materials;2019

3. Stacking Faults in 4H-SiC Single Crystal;Journal of Inorganic Materials;2018

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