Phosphorus-mediated growth of Ge quantum dots on Si(001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Growth and characterization of self-assembled Ge-rich islands on Si
2. Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation
3. Sb-surfactant mediated growth of Ge nanostructures
4. Surfactants in epitaxial growth
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1. Promising modulation of self-assembled Ge-rich QDs by ultra-heavy phosphorus doping;Nanoscale;2020
2. Effects of carbon coverage on Ge quantum dots formation on Si(100) using C-Si reaction and transition of Ge growth mode;Materials Science in Semiconductor Processing;2017-11
3. Mechanism for coarsening of P-mediated Ge quantum dots during in-situ annealing;Surface Science;2007-02
4. 5-7-5 line defects onAs∕Si(100): A general stress-relief mechanism for V/IV surfaces;Physical Review B;2006-07-06
5. Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density;Nanotechnology;2006-04-28
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