Mechanism for coarsening of P-mediated Ge quantum dots during in-situ annealing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference19 articles.
1. Sb-surfactant mediated growth of Ge nanostructures
2. Boron-mediated growth of Ge quantum dots on Si(100) substrate
3. Formation of carbon-induced germanium dots
4. Effect of phosphorus on Ge/Si(001) island formation
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