Effect of pre-Co-deposition Ni ion implantation on the stress level of CoSi2 films on Si(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Metal Silicides: Active elements of ULSI contacts
2. Silicides and ohmic contacts
3. Interfacial reaction and formation mechanism of epitaxial CoSi2 by rapid thermal annealing in Co/Ti/Si(100) system
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5. Micro-Raman spectroscopic study of two-dimensional stress distribution in poly-Si induced by patterns
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1. Formation of epitaxial Co1−xNixSi2 nanowires on thin-oxide-capped (001)Si;Journal of Applied Physics;2013-02-28
2. Scientific visualization: Analysis, exploration and presentation of tri-axial stress states of Kr+ implanted titanium determined by X-ray diffraction;Surface and Coatings Technology;2007-08
3. Metal vapor vacuum-arc ion implantation effects on the adhesion and hardness of ion-beam deposited Cr/Cu films;Applied Surface Science;2007-01
4. Internal stress and adhesion of Cu film/Si prepared by both MEVVA and IBAD;Surface and Coatings Technology;2006-10
5. Effect of Ni interlayer on stress level of CoSi2 films in Co/Ni/Si(100) bi-layered system;Applied Surface Science;2005-12
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