Effect of Ni interlayer on stress level of CoSi2 films in Co/Ni/Si(100) bi-layered system
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference22 articles.
1. Metal Silicides: Active elements of ULSI contacts
2. Silicides and ohmic contacts
3. Interfacial reaction and formation mechanism of epitaxial CoSi2 by rapid thermal annealing in Co/Ti/Si(100) system
4. Properties of CoSi2 formed on (001) Si
5. Internal Stress ofCoSi2Films Formed by Rapid Thermal Annealing
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1. Residual stress in CIGS thin film solar cells on polyimide: simulation and experiments;Journal of Materials Science: Materials in Electronics;2013-11-16
2. Formation of epitaxial Co1−xNixSi2 nanowires on thin-oxide-capped (001)Si;Journal of Applied Physics;2013-02-28
3. Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films;Microelectronics Journal;2008-12
4. Structure transition of single-texture CoSi2 nanolayer grown by refractory-interlayer-mediated epitaxy method;Applied Surface Science;2006-12
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