Interfacial reaction and formation mechanism of epitaxial CoSi2 by rapid thermal annealing in Co/Ti/Si(100) system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366040
Reference19 articles.
1. The impact of intrinsic series resistance on MOSFET scaling
2. Silicides for integrated circuits: TiSi2 CoSi2
3. Oxide mediated epitaxy of CoSi2 on silicon
4. High Temperature Process Limitation on TiSi2
5. Interdiffusion, Phase Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti‐Si(100) System
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