Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates-Reference-Cited by-同舟云学术

Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates

Published:2005-02 Issue:1-2 Volume:275 Page:e1733-e1738
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yablonskii G.P.,Gurskii A.L.,Pavlovskii V.N.,Lutsenko E.V.,Zubialevich V.Z.,Shulga T.S.,Stognij A.I.,Kalisch H.,Szymakowski A.,Jansen R.H.,Alam A.,Schineller B.,Heuken M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Minority-carrier diffusion length in a GaN-based light-emitting diode

2. Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1−xN films

3. Influence of electron injection on performance of GaN photodetectors

4. Electron beam and optical depth profiling of quasibulk GaN

5. Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices

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