Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements-Reference-Cited by-同舟云学术

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Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Published:2004-08 Issue:1 Volume:269 Page:29-34
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Swartz Craig H,Tompkins Randy P,Giles Nancy C,Myers Thomas H,Lu Hai,Schaff William J,Eastman Lester F

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. GaN, AlN, and InN: A review

2. Surface charge accumulation of InN films grown by molecular-beam epitaxy

3. Some properties of inn films prepared by reactive evaporation

4. Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

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1. Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing;ECS Journal of Solid State Science and Technology;2022-01-01

2. High electron mobility in nearly-dislocation-free hexagonal InN;Applied Physics Express;2022-01-01

3. Influence of proton irradiation on carrier mobility in InN epitaxial layers;Thin Solid Films;2019-12

4. Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE;ECS Journal of Solid State Science and Technology;2019-10-11

5. Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples;Journal of Applied Physics;2019-07-28

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