Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
2. AlN/AlGaInN superlattice light-emitting diodes at 280 nm
3. High optical quality AlInGaN by metalorganic chemical vapor deposition
4. Optical bandgap formation in AlInGaN alloys
5. Mechanism of enhanced luminescence in InxAlyGa1−x−yN quaternary alloys
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1. Fully Sputtered n–AlInGaN/p–Mg-InxGa1−xN (x ≤ 0.1) Heterojunction Diodes: Electrical Properties Over a Wide Temperature Range;Journal of Electronic Materials;2022-01-07
2. Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films;physica status solidi (a);2018-09-26
3. Current transport mechanism of Schottky contact of Pt/Au/n-InGaN;Acta Physica Sinica;2018
4. Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices;Applied Physics A;2017-04-12
5. High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier;Chinese Physics B;2017-01
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