High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/1/017803/pdf
Reference33 articles.
1. Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
2. Polarization engineering of c -plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
3. Epitaxial growth and optical characterization of AlInGaN quaternary alloys with high Al/In mole ratio
4. Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells
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1. Recent progress of indium-bearing group-III nitrides and devices: a review;Optical and Quantum Electronics;2024-09-12
2. Numerical study on photoelectric properties of semi-polar 101̄1 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers;AIP Advances;2022-02-01
3. Theoretical study and optimization of the green InGaN/GaN multiple quantum wells with pre-layer;Superlattices and Microstructures;2021-07
4. First-principle investigation of monoclinic (Al x In y Ga1−x−y )2O3 quaternary alloys;Semiconductor Science and Technology;2020-01-17
5. The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor;International Journal of Modern Physics B;2019-07-20
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