Theoretical study and optimization of the green InGaN/GaN multiple quantum wells with pre-layer
Author:
Funder
National Key Research and Development Program of China
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2. Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment
3. Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet
4. 500 nm electrically driven InGaN based laser diodes
5. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’
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1. Green InGaN/GaN Multiple-Quantum-Wells With Pre-Layer for High-Efficiency Mini-LEDs;IEEE Electron Device Letters;2023-06
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